Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter

Fin-typed field effect transistor (FinFET) has considered a suitable device for low power and high-performance applications. The incorporation of gate dielectric lanthanum doped zirconium oxide (LaZrO₂) in the 14 nm silicon on insulator (SOI) FinFET not only enhanced effective carrier mobility but also diminished the short channel effects (SCEs). The FinFET embodiment with LaZrO₂ has dwindled subthreshold swing (SS), reduced drain-induced barrier lowering (DIBL), and raised on-current to off-current ratio as a contrast to SiO₂-based FinFET. A remarkable enhancement of 1.18×, 11×, and 1.3× for transconductance (g_m), early voltage (V_EA), and an intrinsic gain (A_V), respectively, have been investigated. Further, LaZrO₂-based n-FinFET and p-FinFET devices have devised with equal dimensions. The improved noise margin of 0.375 V using a single-fin FinFET-based inverter circuit has proven the acceptance of this device in a circuit application.