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Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system Cover

Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

Materials Science-Poland
Volume 36 (2018): Issue 3 (September 2018)
By: M. Abbas,  N. A. Shah,  K. Jehangir,  M. Fareed and  A. Zaidi  
Open Access
|Nov 2018

Authors

M. Abbas

Department of Physics, COMSATS Institute of Information Technology, Islamabad, Pakistan
Ripha International University, Islamabad, Pakistan

N. A. Shah

nazar_abbas@comsats.edu.pk

Department of Physics, COMSATS Institute of Information Technology, Islamabad, Pakistan

K. Jehangir

Pakistan Council of Renewable Energy Technologies, Islamabad, Pakistan

M. Fareed

Pakistan Council of Renewable Energy Technologies, Islamabad, Pakistan

A. Zaidi

Pakistan Council of Renewable Energy Technologies, Islamabad, Pakistan
DOI: https://doi.org/10.1515/msp-2018-0036 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 364 - 369
Submitted on: Sep 28, 2016
Accepted on: Mar 22, 2018
Published on: Nov 2, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
ZnTe thin films,
heat resistive materials,
vacuum evaporation,
electrical properties,
optical and structural characterization
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2018 M. Abbas, N. A. Shah, K. Jehangir, M. Fareed, A. Zaidi, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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