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Thermal conductivity of silicon doped by phosphorus: ab initio study Cover

Thermal conductivity of silicon doped by phosphorus: ab initio study

Open Access
|Mar 2018
DOI: https://doi.org/10.1515/msp-2017-0115 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 717 - 724
Submitted on: Oct 15, 2016
Accepted on: Dec 19, 2017
Published on: Mar 20, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2018 B. Andriyevsky, W. Janke, V.Yo. Stadnyk, M.O. Romanyuk, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.