Thermal conductivity of silicon doped by phosphorus: ab initio study
By: B. Andriyevsky, W. Janke, V.Yo. Stadnyk and M.O. Romanyuk
Authors
B. Andriyevsky
bohdan.andriyevskyy@tu.koszalin.pl
Faculty of Electronics and Computer Sciences, Koszalin University of Technology, 2 Śniadeckich Str., PL-75-453,, Koszalin, Poland
W. Janke
Faculty of Electronics and Computer Sciences, Koszalin University of Technology, 2 Śniadeckich Str., PL-75-453,, Koszalin, Poland
V.Yo. Stadnyk
The Ivan Franko National University of Lviv, 8 Cyril and Methodius Str., UA-79005, Lviv, Ukraine
M.O. Romanyuk
The Ivan Franko National University of Lviv, 8 Cyril and Methodius Str., UA-79005, Lviv, Ukraine
Language: English
Page range: 717 - 724
Submitted on: Oct 15, 2016
Accepted on: Dec 19, 2017
Published on: Mar 20, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
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© 2018 B. Andriyevsky, W. Janke, V.Yo. Stadnyk, M.O. Romanyuk, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.