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Thermal conductivity of silicon doped by phosphorus: ab initio study Cover

Thermal conductivity of silicon doped by phosphorus: ab initio study

Materials Science-Poland
Volume 35 (2017): Issue 4 (December 2017)
By: B. Andriyevsky,  W. Janke,  V.Yo. Stadnyk and  M.O. Romanyuk  
Open Access
|Mar 2018

Authors

B. Andriyevsky

bohdan.andriyevskyy@tu.koszalin.pl

Faculty of Electronics and Computer Sciences, Koszalin University of Technology, 2 Śniadeckich Str., PL-75-453,, Koszalin, Poland

W. Janke

Faculty of Electronics and Computer Sciences, Koszalin University of Technology, 2 Śniadeckich Str., PL-75-453,, Koszalin, Poland

V.Yo. Stadnyk

The Ivan Franko National University of Lviv, 8 Cyril and Methodius Str., UA-79005, Lviv, Ukraine

M.O. Romanyuk

The Ivan Franko National University of Lviv, 8 Cyril and Methodius Str., UA-79005, Lviv, Ukraine
DOI: https://doi.org/10.1515/msp-2017-0115 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 717 - 724
Submitted on: Oct 15, 2016
Accepted on: Dec 19, 2017
Published on: Mar 20, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
heat conductivity,
molecular dynamics,
ab initio calculations,
phosphorus doped silicon crystals
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2018 B. Andriyevsky, W. Janke, V.Yo. Stadnyk, M.O. Romanyuk, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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