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Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors Cover

Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors

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Open Access
|Mar 2018

References

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DOI: https://doi.org/10.1515/msp-2017-0110 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 893 - 902
Submitted on: Oct 23, 2017
Accepted on: Dec 12, 2017
Published on: Mar 20, 2018
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2018 D. Pucicki, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.