Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors
By: D. Pucicki
Authors
D. Pucicki
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Science and Technolgy, Janiszewskiego 11/17, 50-372, Wroclaw, Poland
Language: English
Page range: 893 - 902
Submitted on: Oct 23, 2017
Accepted on: Dec 12, 2017
Published on: Mar 20, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
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© 2018 D. Pucicki, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.