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Investigation of dielectric properties of heterostructures based on ZnO structures Cover

Investigation of dielectric properties of heterostructures based on ZnO structures

Open Access
|Mar 2018

Abstract

The voltage and frequency dependence of dielectric constant є′, dielectric loss є″, electrical modulus M″, M′, loss tangent tanδ and AC electrical conductivity σAC of p-Si/ZnO/PMMA/Al, p-Si/ZnO/Al and p-Si/PMMA/Al structures have been investigated by means of experimental G-V and C-V measurements at 30 kHz, 100kHz, 500 kHz and 1 MHz in this work. While the values of є′, є″, tanδ and σAC decreased, the values of M′ and M″ increased for these structures when frequency was increased and those of p-Si/ZnO/Al and p-Si/PMMA/Al were comparable with those of p-Si/ZnO/PMMA/Al. The obtained results showed that the values of p-Si/ZnO/PMMA/Al structure were lower than the values of p-Si/ZnO/Al and p-Si/PMMA/Al.

DOI: https://doi.org/10.1515/msp-2017-0108 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 885 - 892
Submitted on: Jul 26, 2017
Accepted on: Dec 7, 2017
Published on: Mar 20, 2018
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2018 A.H. Selçuk, E. Orhan, S. Bilge Ocak, A.B. Selçuk, U. Gökmen, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.