Skip to main content
Have a personal or library account? Click to login
Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors Cover

Inhomogeneous GaInNAs quantum wells: their properties and utilization for improving of p-i-n and p-n junction photodetectors

Materials Science-Poland
Volume 35 (2017): Issue 4 (December 2017)
By:   
Open Access
|Mar 2018
Download

Download Article

Download the full article as a PDF file.

DOI: https://doi.org/10.1515/msp-2017-0110 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 893 - 902
Submitted on: Oct 23, 2017
Accepted on: Dec 12, 2017
Published on: Mar 20, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
dilute nitrides,
quantum well,
structural inhomogeneities,
photodetectors
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2018 D. Pucicki, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 35 (2017): Issue 4 (December 2017)
Previous article