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Etching and ellipsometry studies on CL-VPE grown GaN epilayer Cover

Etching and ellipsometry studies on CL-VPE grown GaN epilayer

Materials Science-Poland
Volume 35 (2017): Issue 1 (March 2017)
By:   
Open Access
|Feb 2017
Authors

Authors

P. Puviarasu

puvi_au@yahoo.co.in

Department of Physics, PSG College of Technology, Coimbatore, India
DOI: https://doi.org/10.1515/msp-2017-0023 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 135 - 139
Submitted on: May 6, 2015
Accepted on: Jan 5, 2017
Published on: Feb 24, 2017
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
gallium nitride,
vapor phase epitaxy,
acid etching,
optical microscope,
ellipsometry
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2017 P. Puviarasu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 35 (2017): Issue 1 (March 2017)
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