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Etching and ellipsometry studies on CL-VPE grown GaN epilayer Cover

Etching and ellipsometry studies on CL-VPE grown GaN epilayer

Materials Science-Poland
Volume 35 (2017): Issue 1 (March 2017)
By: P. Puviarasu  
Open Access
|Feb 2017

Figures & Tables

Optical images of a Cl-VPE (1243 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.
Optical images of a Cl-VPE (1243 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.
Optical images of a Cl-VPE (1263 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.
Optical images of a Cl-VPE (1263 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.
Refractive index of as-grown and high energy Si ion irradiated GaN.
Refractive index of as-grown and high energy Si ion irradiated GaN.
Effect of Si ion irradiation on the film thickness of the GaN layers.
Effect of Si ion irradiation on the film thickness of the GaN layers.
Extinction coefficient of as-grown and high energy Si ion irradiated GaN layers.
Extinction coefficient of as-grown and high energy Si ion irradiated GaN layers.
DOI: https://doi.org/10.1515/msp-2017-0023 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 135 - 139
Submitted on: May 6, 2015
|
Accepted on: Jan 5, 2017
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Published on: Feb 24, 2017
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
gallium nitride,
vapor phase epitaxy,
acid etching,
optical microscope,
ellipsometry
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2017 P. Puviarasu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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