Etching and ellipsometry studies on CL-VPE grown GaN epilayer Cover

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Etching and ellipsometry studies on CL-VPE grown GaN epilayer

Materials Science-Poland

Volume 35 (2017): Issue 1 (March 2017)

By: P. Puviarasu

Open Access

|Feb 2017

Figures & Tables

Optical images of a Cl-VPE (1243 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.

Optical images of a Cl-VPE (1263 K) GaN grown on sapphire substrate after etching in H3PO4 at 433 K (a) for 5 min and (b) for 10 min.

Refractive index of as-grown and high energy Si ion irradiated GaN.

Effect of Si ion irradiation on the film thickness of the GaN layers.

Extinction coefficient of as-grown and high energy Si ion irradiated GaN layers.

DOI: https://doi.org/10.1515/msp-2017-0023 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331

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Language: English

Page range: 135 - 139

Submitted on: May 6, 2015

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Accepted on: Jan 5, 2017

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Published on: Feb 24, 2017

Published by: Wroclaw University of Science and Technology

In partnership with: Paradigm Publishing Services

Publication frequency: 4 issues per year

Keywords:

gallium nitride,

vapor phase epitaxy,

optical microscope,

Related subjects:

Materials sciences,

Materials sciences, other,

Functional and smart materials,

Materials characterization and properties

© 2017 P. Puviarasu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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