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Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE Cover

Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
By: Łukasz Gelczuk,  Maria Dąbrowska-Szata,  Beata Ściana,  Damian Pucicki,  Damian Radziewicz,  Krzysztof Kopalko and  Marek Tłaczała  
Open Access
|Dec 2016

Authors

Łukasz Gelczuk

lukasz.gelczuk@pwr.edu.pl

Poland

Maria Dąbrowska-Szata

Poland

Beata Ściana

Poland

Damian Pucicki

Poland

Damian Radziewicz

Poland

Krzysztof Kopalko

Poland

Marek Tłaczała

Poland
DOI: https://doi.org/10.1515/msp-2016-0126 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 726 - 734
Submitted on: Dec 18, 2015
|
Accepted on: Nov 2, 2016
|
Published on: Dec 19, 2016
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
GaNAs,
dilute nitrides,
deep-level defects,
DLTS,
LDLTS,
APMOVPE
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 Łukasz Gelczuk, Maria Dąbrowska-Szata, Beata Ściana, Damian Pucicki, Damian Radziewicz, Krzysztof Kopalko, Marek Tłaczała, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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