Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

Łukasz Gelczuk; Maria Dąbrowska-Szata; Beata Ściana; Damian Pucicki; Damian Radziewicz; Krzysztof Kopalko; Marek Tłaczała

doi:10.1515/msp-2016-0126

Abstract

Conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

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Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

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