Have a personal or library account? Click to login
Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures Cover

Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures

Materials Science-Poland
Volume 34 (2016): Issue 1 (March 2016)
By:
Open Access
|Apr 2016

Metrics

DOI: https://doi.org/10.1515/msp-2016-0030 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 69 - 78
Submitted on: Apr 25, 2015
Accepted on: Jan 8, 2016
Published on: Apr 27, 2016
Published by: Sciendo
In partnership with: Paradigm Publishing Services
Publication frequency: 4 times per year
Keywords:
d-value,
doping,
defects,
band gap,
Burstein-Moss effect,
conductivity
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 Gunjan Patwari, Pradip Kumar Kalita, Ranjit Singha, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Previous articleVolume 34 (2016): Issue 1 (March 2016)Next article