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Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures Cover

Structural and optoelectronic properties of glucose capped Al and Cu doped ZnO nanostructures

Materials Science-Poland
Volume 34 (2016): Issue 1 (March 2016)
By:
Open Access
|Apr 2016

Authors

Gunjan Patwari

gunjanpatwari2012@gmail.com

India

Pradip Kumar Kalita

India

Ranjit Singha

India
DOI: https://doi.org/10.1515/msp-2016-0030 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 69 - 78
Submitted on: Apr 25, 2015
Accepted on: Jan 8, 2016
Published on: Apr 27, 2016
Published by: Sciendo
In partnership with: Paradigm Publishing Services
Publication frequency: 4 times per year
Keywords:
d-value,
doping,
defects,
band gap,
Burstein-Moss effect,
conductivity
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2016 Gunjan Patwari, Pradip Kumar Kalita, Ranjit Singha, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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