References
- [1]Pearton S.J., Zolper J.C., Shul R.J., Ren F., J. Appl. Phys., 86 (1999), 1. Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones
- [2]Kim H., Park S.-J., Hwang H., J. Vac. Sci. Technol. B, 19 (2001), 579.
- [3]Nakano Y., Jimbo T., Appl. Phys. Lett., 82 (2003), 218.
- [4]Wu J.Y., Wang H.H., Wang Y.H., Houng M.P., IEEE Electron. Device. Lett., 20 (1999), 18.
- [5]Miczek M., Mizue C., Hashizume T., Adamowicz B., J. Appl. Phys., 103 (2008), 104510.
- [6]Bidzinski P., Miczek M., Adamowicz B., Mizue CH., Hashizume T., Jpn. J. Appl. Phys., 50 (2011), 04DF08.
- [7]Korbutowicz R., Prażmowska J., Wet thermal oxidation of GaAs and GaN. In: GRYM J. (Ed.), Semiconductor technologies, In-The, Vukovar, 2010, p. 105.
- [8]Korbutowicz R., Prażmowska J., Wągrowski Z., Szyszka A., Tłaczała M., Procedings of ASDAM 2008, Smolenice, Slovakia, 2008, 163.
- [9]Bruggeman D.A.G., Ann. Phys.-Leipzig, 24 (5) (1935), 636.
- [10]Zollner S., Konkar A., Gregory R.B., Wilson S.R., Nikishin S.A., Temkin H., MRS Spring Meeting San Francisco, 1999, Paper Y5.21.