Abstract
The systems suitable for a high-temperature electrochemical synthesis on the surfaces of diamond, boron nitride, and silicon and boron carbides were selected on the basis of thermodynamic analysis of the reactions of the dielectrics and semiconductors with ionic melts. The results obtained in the electrochemical study of these systems are reported. As example, the electrodeposition of molybdenum carbide on diamond, BN, SiC and boron carbide surfaces is discussed in detail.