Skip to main content
Have a personal or library account? Click to login
Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties Cover

Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties

Journal of Electrical Engineering
Volume 63 (2012): Issue 5 (September 2012)
By: ,  ,  ,  ,  ,   and    
Open Access
|Nov 2012
Authors

Authors

Jozef Huran

Albín Valovič

albin.valovic@savba.sk

Michal Kučera

Angela Kleinová

Eva Kovačcová

Pavol Boháček

Mária Sekáčová

DOI: https://doi.org/10.2478/v10187-012-0049-z | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
Journal RSS Feed
Language: English
Page range: 333 - 335
Published on: Nov 20, 2012
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
hydrogenated amorphous silicon carbon nitride,
PECVD
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2012 Jozef Huran, Albín Valovič, Michal Kučera, Angela Kleinová, Eva Kovačcová, Pavol Boháček, Mária Sekáčová, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

Volume 63 (2012): Issue 5 (September 2012)
Previous article
Next article