Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties

Huran, Jozef; Valovič, Albín; Kučera, Michal; Kleinová, Angela; Kovačcová, Eva; Boháček, Pavol; Sekáčová, Mária

doi:10.2478/v10187-012-0049-z

Abstract

Hydrogenated amorphous silicon carbon nitride films were grown by plasma enhanced chemical vapor deposition (PECVD) technique. The flow rates of SiH4 , CH4 and NH3 gases were 6 sccm, 30 sccm and 8 sccm, respectively. The deposition temperatures were 350, 400 and 450 ◦C. The RBS and ERD results showed that the concentrations of Si, C, N and H are practically the same in the films deposited at substrate temperatures in the range 350-450 ◦C. In photoluminescence spectra we identified two peaks and assigned them to radiative transitions typical for amorphous materials, ie band to band and defect-related ones. The electrical characterization consists of I(V ) measurement in sandwich configuration for voltages up to 100 V. From electrical characterization, it was found that with increased deposition temperature the resistivity of the amorphous SiCN film was reduced.

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Hydrogenated amorphous silicon carbon nitride films prepared by PECVD technology: properties

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