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Ohmic Contacts to p-GaN Using Au/Ni-Zn-O Metallization Cover

Ohmic Contacts to p-GaN Using Au/Ni-Zn-O Metallization

Journal of Electrical Engineering
Volume 62 (2011): Issue 5 (September 2011)
By: ,  ,  ,   and    
Open Access
|Oct 2011
Authors

Authors

Jozef Liday

Peter Vogrinčič

Ivan Hotový

Helmut Sitter

Alberta Bonanni

DOI: https://doi.org/10.2478/v10187-011-0049-4 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 309 - 312
Published on: Oct 24, 2011
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
p-GaN,
Au/Ni-Zn-O/p-GaN contact structure,
AES depth profiling,
low resistance ohmic contact
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2011 Jozef Liday, Peter Vogrinčič, Ivan Hotový, Helmut Sitter, Alberta Bonanni, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

Volume 62 (2011): Issue 5 (September 2011)