Ohmic Contacts to p-GaN Using Au/Ni-Zn-O Metallization

We have studied the electrical properties and depth concentration profiles of Au/Ni-Zn-O/p-GaN and Au/Ni-Zn/p-GaN, thus of structures containing zinc as a p-type dopant utilized to increase the concentration of free charge carriers in the subsurface region of GaN and to gain a low-resistance ohmic contact. The layers were deposited on p-GaN by DC reactive magnetron sputtering. The prepared contact structures were annealed in N₂, structure Au/Ni-Zn/p-GaN also in O₂. The contact structures containing zinc exhibited lower values of contact resistivity in comparison with those without zinc. It was also found that the values of contact resistivity for both Au/Ni-Zn-O/p-GaN and Au/Ni-Zn/p-GaN were the same, thus it was not affected by the presence of a small content of oxygen (< 0.2 at%) in the working atmosphere during the deposition of layers. Similarly, various gaseous ambients (N₂ or a mixture of N₂ + O₂) during subsequent annealing of the contacts had no observable influence upon the magnitude of the contact resistivity. In our opinion the ohmic nature of the Au/Ni-Zn-O/p-GaN and Au/Ni-Zn/p-GaN contacts is related to a reconstruction of the contacts to a sequence metal/p-NiO/p-GaN due to annealing in nitrogen or in a mixture of oxygen and nitrogen and the ohmic properties of the contacts are predetermined by creating a thin NiO oxide layer on the metal/p-GaN interface. We believe that the lower values of the contact resistance in Au/Ni-Zn-O/p-GaN and Au/Ni-Zn/p-GaN contacts than in structure Au/Ni-O/p-GaN are caused by an enhanced hole concentration in the surface region of p-GaN due to zinc diffusion from the zinc-doped contact layer.