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Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications Cover

Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications

Journal of Electrical Engineering
Volume 62 (2011): Issue 2 (March 2011)
By: ,  ,  ,  ,   and    
Open Access
|Jun 2011
References

References

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DOI: https://doi.org/10.2478/v10187-011-0015-1 | Journal eISSN: 1339-309X (formerly 1335-3632) | Journal ISSN: 1335-3632
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Language: English
Page range: 93 - 98
Published online: Jun 7, 2011
Published in print: Mar 1, 2011
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Keywords:
crystal structure,
organometallic vapor phase epitaxy (OMVPE),
semiconducting III-V materials
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2011 Stanislav Hasenöhrl, Jozef Novák, Ivo Vávra, Ján Šoltýs, Michal Kučera, Alexander Šatka, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

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