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Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications Cover

Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications

Journal of Electrical Engineering
Volume 62 (2011): Issue 2 (March 2011)
By: Stanislav Hasenöhrl,  Jozef Novák,  Ivo Vávra,  Ján Šoltýs,  Michal Kučera and  Alexander Šatka  
Open Access
|Jun 2011

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DOI: https://doi.org/10.2478/v10187-011-0015-1 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 93 - 98
Published on: Jun 7, 2011
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
crystal structure,
organometallic vapor phase epitaxy (OMVPE),
semiconducting III-V materials
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2011 Stanislav Hasenöhrl, Jozef Novák, Ivo Vávra, Ján Šoltýs, Michal Kučera, Alexander Šatka, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

Volume 62 (2011): Issue 2 (March 2011)