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Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications Cover

Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications

Open Access
|Jun 2011

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DOI: https://doi.org/10.2478/v10187-011-0015-1 | Journal eISSN: 1339-309X (formerly 1335-3632) | Journal ISSN: 1335-3632
Language: English
Page range: 93 - 98
Published on: Jun 7, 2011
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services

© 2011 Stanislav Hasenöhrl, Jozef Novák, Ivo Vávra, Ján Šoltýs, Michal Kučera, Alexander Šatka, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.