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Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization Cover

Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization

Journal of Electrical Engineering
Volume 61 (2010): Issue 6 (November 2010)
By: Jozef Liday,  Peter Vogrinčič,  Ivan Hotový,  Alberta Bonanni,  Helmut Sitter,  Tibor Lalinský,  Gabriel Vanko,  Vlastimil Řeháček,  Juraj Breza and  Gernot Ecke  
Open Access
|Jun 2011

References

  1. MURAKAMI, M.—KOIDE, Y.: Critical Reviews in Solid State and Materials Sciences 23 (1998), 1.10.1080/10408439891324167
    Search in Google Scholar
  2. HO, J. K.—JONG, C. S.—CHIU, C. C.—HUANG, C. N.—CHEN, C. Y.—SHIH, K. K.: Appl. Phys. Lett. 74 (1999), 1275.10.1063/1.123546
    Search in Google Scholar
  3. HO, J. K.—JONG, C. S.—CHIU, C. C.—HUANG, C. N.—SHIH, K. K.—CHEN, L. C.—CHEN, F. R.—KAI, J. J.: J. Appl. Phys. 86 (1999), 4491.10.1063/1.371392
    Search in Google Scholar
  4. MAED, A. T.—KOIDE, Y.—MURAKAMI, M.: Appl. Phys. Lett. 75 (1999), 4145.10.1063/1.125564
    Search in Google Scholar
  5. MISTELE, D.—FEDLER, F.—KLAUSING, H.—ROTTER, T.—STEMMER, J.—SEMCHINOVA, O. K.—ADERHOLD, J.: J. Cryst. Growth 230 (2001), 564.10.1016/S0022-0248(01)01250-7
    Search in Google Scholar
  6. CHEN, L. C.—HO, J. K.—JONG, C. S.—CHIU, C. C.—SHIH, K. K.—CHEN, F. R.—KAI, J. J.—CHANG, L.: J. Appl. Phys. 76 (2000)), 3703.10.1063/1.126755
    Search in Google Scholar
  7. JANG, H. W.—KIM, S. Y.—LEE, J. L.: J. Appl. Phys. 94 (2003), 1748.10.1063/1.1586983
    Search in Google Scholar
  8. EENZEL, R.—FISCHER, G. G.—SCHMID-FETZER, R.: Mater. Sci. Semicond. Process. 0 (2000), 1.
    Search in Google Scholar
  9. PARK, M. R.—SONG, Y. J.—ANDERSON, W. A.: ETRI Journ. 24 (2002), 349.10.4218/etrij.02.0102.0503
    Search in Google Scholar
  10. NARAYAN, J.—WANG, H.—OH, T. H.—CHOI, H. K.—FAN, J. C. C.: Appl. Phys. Lett. 81 (2002), 3978.10.1063/1.1524032
    Search in Google Scholar
  11. WANG, S. H.—MOHNEY, S. E.—BIRKHAHN, R.: J. Appl. Phys. 91 (2002), 3711.10.1063/1.1448885
    Search in Google Scholar
  12. SONG, J. O.—LEEM, D. S.—SEONG, T. Y.: Appl. Phys. Lett. 83 (2004), 3513.10.1063/1.1622984
    Search in Google Scholar
  13. SONG, J. O.—LEEM, D. S.—SEONG, T. Y.: Appl. Phys. Lett. 84 (2004), 4663.10.1063/1.1759774
    Search in Google Scholar
  14. LIDAY, J.—HOTOVÝ, I.—SITTER, H.—SCHMIDEGG, K. VOGRINČIČ, P.—BONANNI, A.—BREZA, J.—ECKE, G. VÁVRA, I.: Appl. Surf. Sci. 253 (2007), 3174.10.1016/j.apsusc.2006.07.011
    Search in Google Scholar
DOI: https://doi.org/10.2478/v10187-010-0058-8 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 378 - 381
Published on: Jun 7, 2011
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
p-GaN,
Au/Ni-Mg-O/p-GaN contact structure,
AES depth profiling,
low resistance ohmic contact
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2011 Jozef Liday, Peter Vogrinčič, Ivan Hotový, Alberta Bonanni, Helmut Sitter, Tibor Lalinský, Gabriel Vanko, Vlastimil Řeháček, Juraj Breza, Gernot Ecke, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

Volume 61 (2010): Issue 6 (November 2010)