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Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization Cover

Ohmic contacts to p-GaN Using Au/Ni-Mg-O Metallization

Journal of Electrical Engineering
Volume 61 (2010): Issue 6 (November 2010)
By: Jozef Liday,  Peter Vogrinčič,  Ivan Hotový,  Alberta Bonanni,  Helmut Sitter,  Tibor Lalinský,  Gabriel Vanko,  Vlastimil Řeháček,  Juraj Breza and  Gernot Ecke  
Open Access
|Jun 2011

Authors

Jozef Liday

Peter Vogrinčič

Ivan Hotový

Alberta Bonanni

Helmut Sitter

Tibor Lalinský

Gabriel Vanko

Vlastimil Řeháček

Juraj Breza

Gernot Ecke

DOI: https://doi.org/10.2478/v10187-010-0058-8 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 378 - 381
Published on: Jun 7, 2011
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
p-GaN,
Au/Ni-Mg-O/p-GaN contact structure,
AES depth profiling,
low resistance ohmic contact
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2011 Jozef Liday, Peter Vogrinčič, Ivan Hotový, Alberta Bonanni, Helmut Sitter, Tibor Lalinský, Gabriel Vanko, Vlastimil Řeháček, Juraj Breza, Gernot Ecke, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

Volume 61 (2010): Issue 6 (November 2010)