PATTERNED LASER CRYSTALLIZATION OF a-Si

B. Polyakov; G. Marcins; M. Chubarov; A. Kuzmin; V. Klykov; I. Tale

doi:10.2478/v10047-009-0009-y

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PATTERNED LASER CRYSTALLIZATION OF a-Si

Latvian Journal of Physics and Technical Sciences

Volume 46 (2009): Issue 3 (June 2009)

By: B. Polyakov, G. Marcins, M. Chubarov, A. Kuzmin, V. Klykov and I. Tale

Open Access

|Jul 2009

Abstract

Thin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.

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Articles in this issue

DOI: https://doi.org/10.2478/v10047-009-0009-y | Journal eISSN: 2255-8896 (formerly 0868-8257) | Journal ISSN: 0868-8257

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Language: English

Page range: 50 - 54

Published on: Jul 22, 2009

Published by: Institute of Physical Energetics

In partnership with: Paradigm Publishing Services

Related subjects:

Physics,

Technical and applied physics

© 2009 B. Polyakov, G. Marcins, M. Chubarov, A. Kuzmin, V. Klykov, I. Tale, published by Institute of Physical Energetics
This work is licensed under the Creative Commons License.

Volume 46 (2009): Issue 3 (June 2009)