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Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap Cover

Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap

Materials Science-Poland
Volume 31 (2013): Issue 4 (October 2013)
By: D. Pucicki,  K. Bielak,  R. Kudrawiec,  D. Radziewicz and  B. Ściana  
Open Access
|Dec 2013

References

  1. [1] Henini M., Dilute Nitride Semiconductors, Elsevier, School of Physics and Astronomy, University of Nottingham, UK, 2005.
    Search in Google Scholar
  2. [2] Bisping D. et al., IEEE J. Selected Topics in Quantum Electronics, 15 (2009), 968. http://dx.doi.org/10.1109/JSTQE.2009.201425010.1109/JSTQE.2009.2014250
    Search in Google Scholar
  3. [3] Ptak A. J., France R., Jiang C-S, Romero M. J., J. Crystal Growth, 311 (2009), 1876. http://dx.doi.org/10.1016/j.jcrysgro.2008.09.18410.1016/j.jcrysgro.2008.09.184
    Search in Google Scholar
  4. [4] Lu W. et al., Semicond. Sci. Technol., 24 (2009), 105016. http://dx.doi.org/10.1088/0268-1242/24/10/10501610.1088/0268-1242/24/10/105016
    Search in Google Scholar
  5. [5] Li W., Pessa M., Likonen J., Appl. Phys. Lett., 78 (2001), 2864. http://dx.doi.org/10.1063/1.137054910.1063/1.1370549
    Search in Google Scholar
  6. [6] Albo A., Cytermann C., Bahir G., Fekete D., Appl. Phys. Lett., 96 (2010), 141102. http://dx.doi.org/10.1063/1.336021610.1063/1.3360216
    Search in Google Scholar
  7. [7] Fan W.J. et al., Appl. Phys. Lett., 80 (2002), 4136. http://dx.doi.org/10.1063/1.148391310.1063/1.1483913
    Search in Google Scholar
  8. [8] Leibiger G., Gottschalch V., Schubert M., J. Appl. Phys., 90 (2001), 5951. http://dx.doi.org/10.1063/1.141685910.1063/1.1416859
    Search in Google Scholar
  9. [9] Yang X., Heroux J.B., Jurkovic M.J., Wang W.I., J. Vac. Sci. Technol. B, 17 (1999), 1144. http://dx.doi.org/10.1116/1.59071010.1116/1.590710
    Search in Google Scholar
  10. [10] Seong M. J., Hanna M. C., Mascarenhas A., Appl. Phys. Lett., 79 (2001), 3974. http://dx.doi.org/10.1063/1.142446910.1063/1.1424469
    Search in Google Scholar
  11. [11] Grillo V., Albrecht M., Remmele T., Strunk H. P., Egorov A. Y., Riechert H., Journal Of Applied Physics, 90 (2001), 3792. http://dx.doi.org/10.1063/1.140213910.1063/1.1402139
    Search in Google Scholar
  12. [12] Shan W. et al., Phys. Rev. Lett., 82 (1999), 1221. http://dx.doi.org/10.1103/PhysRevLett.82.122110.1103/PhysRevLett.82.1221
    Search in Google Scholar
  13. [13] Adachi S., Properties of Semiconductor Alloys: Group — IV, III — V and II — VI Semiconductors, John Wiley & Sons, Ltd., 2009. http://dx.doi.org/10.1002/978047074438310.1002/9780470744383
    Search in Google Scholar
  14. [14] Heroux J. B., Yang X., Wang W. I., J. Appl.Phys., 92 (2002), 4361. http://dx.doi.org/10.1063/1.150781710.1063/1.1507817
    Search in Google Scholar
  15. [15] Kudrawiec R. et al., J. Appl.Phys., 97 (2005), 053515. http://dx.doi.org/10.1063/1.185472910.1063/1.1854729
    Search in Google Scholar
DOI: https://doi.org/10.2478/s13536-013-0137-1 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 489 - 494
Published on: Dec 15, 2013
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
dilute nitrides,
composition determination,
quantum well,
BAC band-anticrossing model,
HRXRD high resolution X-ray diffraction
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2013 D. Pucicki, K. Bielak, R. Kudrawiec, D. Radziewicz, B. Ściana, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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