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Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap Cover

Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap

Materials Science-Poland
Volume 31 (2013): Issue 4 (October 2013)
By: ,  ,  ,   and    
Open Access
|Dec 2013
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DOI: https://doi.org/10.2478/s13536-013-0137-1 | Journal eISSN: 2083-134X (formerly 2083-124X) | Journal ISSN: 2083-1331
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Language: English
Page range: 489 - 494
Published on: Dec 15, 2013
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Keywords:
dilute nitrides,
composition determination,
quantum well,
BAC band-anticrossing model,
HRXRD high resolution X-ray diffraction
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2013 D. Pucicki, K. Bielak, R. Kudrawiec, D. Radziewicz, B. Ściana, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 31 (2013): Issue 4 (October 2013)
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