Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap Cover

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Determination of indium and nitrogen contents of InGaAsN quantum wells by HRXRD study supported by BAC calculation of the measured energy gap

Materials Science-Poland

Volume 31 (2013): Issue 4 (October 2013)

By: D. Pucicki, K. Bielak, R. Kudrawiec, D. Radziewicz and B. Ściana

Open Access

|Dec 2013

DOI: https://doi.org/10.2478/s13536-013-0137-1 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331

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Language: English

Page range: 489 - 494

Published on: Dec 15, 2013

Published by: Wroclaw University of Science and Technology

In partnership with: Paradigm Publishing Services

Publication frequency: 4 issues per year

Keywords:

dilute nitrides,

composition determination,

BAC band-anticrossing model,

HRXRD high resolution X-ray diffraction

Related subjects:

Materials sciences,

Materials sciences, other,

Functional and smart materials,

Materials characterization and properties

© 2013 D. Pucicki, K. Bielak, R. Kudrawiec, D. Radziewicz, B. Ściana, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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