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Tin sulphide solar cells: An analysis using a theoretical method for an approximately 24% efficacy path Cover

Tin sulphide solar cells: An analysis using a theoretical method for an approximately 24% efficacy path

Open Access
|Dec 2024

Figures & Tables

Figure 1

(a) Structural representation of a solar cell device based on SnS, TiO2, and ITO. (b) Adjustment of solar cell parameters (J SC, V OC, ɳ, and fill factor) with the thickness of SnS.

Figure 2

Variations in the parameters of a solar cell (J SC, V OC, ɳ, and fill factor) with (a) band gap, (b) radiative recombination coefficient, (c) CBDOS, and (d) VBDOS of SnS.

Figure 3

(a) Variations in parameters of solar cells with the work function of back contacts and (b) CBO.

Figure 4

Variation in the cell parameters with (a) operating temperature and (b) without and with BSF layers.

Figure 5

J–V curves of the output panel at operating temperatures of (a) 300 K and (b) 275 K, (c) quantum efficiency of the cell, and (d) energy band alignment for the cell.

Optimized parameters for solar cells based on SnS_

Band gapVBDOSThicknessCBDOSBSFRRCCBO
1.5 eV2.4 × 1018 cm−3 2 µm1.17 × 1018 cm−3 NiO1 × 10−10 cm3 s−1 0.48 eV

Parameters for different layers_

Parameters (unit)ITO [35]TiO2 [36]SnS [37]NiO [38]
Thickness (µm)0.20.520.03–0.1
Energy gap (eV)3.32.261.3 [39]3.8
CBDOS (cm−3)5.2 × 1018 2 × 1017 7.5 × 1018 2.8 × 1019
Dielectric constant8.91012.510.07
Hole mobility (cm2 V−1 s−1)1025456.5
VBDOS (cm−3)1 × 1018 6 × 1018 1 × 1019 1 × 1019
Electron mobility cm2 V−1 s−1 10100100130
Shallow uniform-acceptor density (cm−3)005.7 × 1015 2.8 × 1019
Shallow uniform-donor density (cm−3)1 × 1020 1 × 1017 00
Electron affinity (eV)4.44.23.52 [40]1.46
RRC (cm3 s−1)1 × 10−8 1 × 10−8 2.3 × 10−9 [41]2.3 × 10−9
Absorption coefficient5 × 104 [27]
DOI: https://doi.org/10.2478/msp-2024-0045 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 92 - 100
Submitted on: Aug 29, 2024
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Accepted on: Dec 3, 2024
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Published on: Dec 31, 2024
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2024 Khairiah Alshehri, Mohammad Shariq, Aeshah Alasmari, Hussain J. Alathlawi, Rachid Karmouch, Mohd Shakir Khan, Ali Alzahrani, Noura E. Alhazmi, Eman Almutib, Rubina Sultana Mohammed, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.