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Annealing effect on the structural and optoelectronic properties of Cu-Cr-O thin films deposited by reactive magnetron sputtering using a single CuCr target Cover

Annealing effect on the structural and optoelectronic properties of Cu-Cr-O thin films deposited by reactive magnetron sputtering using a single CuCr target

Materials Science-Poland
Volume 41 (2023): Issue 1 (March 2023)
By:
Open Access
|Aug 2023

Figures & Tables

Fig. 1.

XRD patterns of Cu-Cr-O films with different post-annealing temperatures
XRD patterns of Cu-Cr-O films with different post-annealing temperatures

Fig. 2.

The ΔG of reactions 2, 4, and 6 with different annealing temperatures
The ΔG of reactions 2, 4, and 6 with different annealing temperatures

Fig. 3.

Cross-section and plane-view SEM images of Cu-Cr-O films with different post-annealing temperatures: (a) as-deposited, (b) 500°C, (c) 600°C, (d) 700°C, and (e) 800°C
Cross-section and plane-view SEM images of Cu-Cr-O films with different post-annealing temperatures: (a) as-deposited, (b) 500°C, (c) 600°C, (d) 700°C, and (e) 800°C

Fig. 4.

AFM images of Cu-Cr-O films with different post-annealing temperatures: (a) as-deposited, (b) 500°C, (c) 600°C, (d) 700°C, and (e) 800°C
AFM images of Cu-Cr-O films with different post-annealing temperatures: (a) as-deposited, (b) 500°C, (c) 600°C, (d) 700°C, and (e) 800°C

Fig. 5.

TEM images with corresponding SAD patterns (insets) of Cu-Cr-O films with different post-annealing temperatures: (a) 500°C, (b) 600°C, and (c) 800°C
TEM images with corresponding SAD patterns (insets) of Cu-Cr-O films with different post-annealing temperatures: (a) 500°C, (b) 600°C, and (c) 800°C

Fig. 6.

(a) Light transmittance of Cu-Cr-O films with different post-annealing temperatures. (b) variation of (αhv)2 versus hv
(a) Light transmittance of Cu-Cr-O films with different post-annealing temperatures. (b) variation of (αhv)2 versus hv

The elemental composition of Cu-Cr-O films as a function of annealing temperature

Annealing temperature (°C)Cu (at.%)Cr (at.%)O(at.%)Cu/Cr ratio
As-deposited28.4114.0557.542.02
50031.6915.9552.361.99
60031.2016.2452.551.92
70031.2315.6853.091.99
80031.8115.6852.512.03

The carrier concentration, Hall mobility, and electrical resistivity of Cu-Cr-O films as a function of annealing temperature

Annealing temperature (°C)Carrier concentration (×1017 cm−3)Hall Mobility (cm2/V-s)Electrical resistivity (Ω-cm)
5002.810.121183
6004.050.37341
7003.250.22386
8000.430.268540
DOI: https://doi.org/10.2478/msp-2023-0017 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 191 - 201
Submitted on: May 15, 2023
Accepted on: Jul 13, 2023
Published on: Aug 25, 2023
Published by: Sciendo
In partnership with: Paradigm Publishing Services
Publication frequency: 4 times per year
Keywords:
Transparent conducting oxide,
copper chromium oxide,
annealing temperature,
optoelectronic properties
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2023 Du-Cheng Tsai, Erh-Chiang Chen, Yen-Lin Huang, Fuh-Sheng Shieu, Zue-Chin Chang, published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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