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Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y Cover

Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y

Materials Science-Poland
Volume 38 (2020): Issue 2 (June 2020)
By: Chuan-Zhen Zhao,  He-Yu Ren,  Xiao-Dong Sun,  Sha-Sha Wang and  Ke-Qing Lu  
Open Access
|Oct 2020

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DOI: https://doi.org/10.2478/msp-2020-0028 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 248 - 252
Submitted on: May 11, 2017
Accepted on: Mar 1, 2019
Published on: Oct 6, 2020
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
GaNSbAs,
N level,
band gap energy,
Sb level,
dilute nitride
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2020 Chuan-Zhen Zhao, He-Yu Ren, Xiao-Dong Sun, Sha-Sha Wang, Ke-Qing Lu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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