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Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y Cover

Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y

Open Access
|Oct 2020

Authors

Chuan-Zhen Zhao

as3262001@aliyun.com

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, China

He-Yu Ren

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, China

Xiao-Dong Sun

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, China

Sha-Sha Wang

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, China

Ke-Qing Lu

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, China
DOI: https://doi.org/10.2478/msp-2020-0028 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 248 - 252
Submitted on: May 11, 2017
Accepted on: Mar 1, 2019
Published on: Oct 6, 2020
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2020 Chuan-Zhen Zhao, He-Yu Ren, Xiao-Dong Sun, Sha-Sha Wang, Ke-Qing Lu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.