Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y
By: Chuan-Zhen Zhao, He-Yu Ren, Xiao-Dong Sun, Sha-Sha Wang and Ke-Qing Lu
Authors
Chuan-Zhen Zhao
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, China
He-Yu Ren
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, China
Xiao-Dong Sun
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, China
Sha-Sha Wang
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, China
Ke-Qing Lu
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin, China
Language: English
Page range: 248 - 252
Submitted on: May 11, 2017
Accepted on: Mar 1, 2019
Published on: Oct 6, 2020
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
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© 2020 Chuan-Zhen Zhao, He-Yu Ren, Xiao-Dong Sun, Sha-Sha Wang, Ke-Qing Lu, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.