References
- [1] F
eng Z.C., III-Nitride Semiconductor Materials, World Scientific, Taiwan, 2006. - [2] C
haudhuri J., Nyakiti L., Lee R.G., Gu Z., Edgar J.H., Wen J.G., Mater. Charact., 58 (2007), 672.10.1016/j.matchar.2006.11.013 - [3] O
livares J., González -Castilla S., Clement M., Sanz -Hervás A., Vergara L., Sangrador J., Iborra E., Diam. Relat. Mater., 16 (2007), 1421. - [4] K
ar J.P., Bose G., Tuli S., Scripta Mater., 54 (2006), 1755. - [5] Z
hang J.X., Cheng H., Chen Y.Z., Uddin A., Yuan S., Geng S.J., Zhang S., Surf. Coat. Tech., 198 (2005), 68. - [6] X
u X.H., Wu H.S., Zhang C.J., Jin Z.H., Thin Solid Films, 388 (2001), 62. - [7] V
ispute R.D., Narayan J., Wu H., Jagannadham K., J. Appl. Phys., 77 (1995), 431. - [8] V
ispute R.D., Wu H., Narayan J., Appl. Phys. Lett., 67 (1995), 1549. - [9] L
u H., Schaff WI. J., Hwang J., Wu H., Koley G., Eastman L.F., Appl. Phys. Lett., 79 (2001), 1489. - [10] G
uerrero R.M., Garcia J.R.V., Superficie y Vacio, 9 (2001), 82. - [11] M
orita M., Uesugi N., Isogai S., Tsubouchi K., Mikoshiba N., Jpn. J. Appl. Phys., 20 (1981), 17. - [12] C
hubachi Y., Sato KI., Kojima K., Thin Solid Films, 122 (1984), 259. - [13] A
ndrew R.B., OpenStax CNX., July 14 (2009). - [14] R
oman Y.G., Adriaansen A.P.M., Thin Solid Films, 169 (1989), 241. - [15] E
gashira Y., Kim H.J., Komiyama H., J. Am. Ceram. Soc., 77 (1994), 2009. - [16] H
arris H., Biswas N., Temkin H., Gangopadhyay S., Strathman M., J. Appl. Phys., 90 (2001), 5825.10.1063/1.1413484 - [17] A
zema N., Durand J., Berjoan R., Dupuy C., Cot L., J. Eur. Ceram. Soc., 8 (1991), 291. - [18] G
ordon R.G., Hoffman D.M., Riaz U., J. Mater. Res., 6 (1991), 5. - [19] D
upuie J.L., Gulari E., J. Vac. Sci. Technol. A, 10 (1992), 18. - [20] J
ones A.C., Rushworth S.A., Houlton D.J., Roberts J.S., Roberts V., Whitehouse C.R., Critchlow G.W., Chem. Vapor Deposit, 2 (1996), 5. - [21] R
oberts V., Roberts J.S., Jones A.C., Rushworth S., In MRS online proceedings, Cambridge University Press, London, 1995, p. 395. - [22] R
ushworth S.A., Brown J.R., Houlton D.J., Jones A.C., Roberts V., Roberts J.S., Critchlow G.W., Adv. Mater. Opt. Elec., 6 (1996), 119. - [23] J
ones A.C., Auld J., Rushworth S.A., Houlton D.J., Critchlow G.W., J. Mater. Chem., 4 (1996), 1591. - [24] W
istrela E., Bittner A., Schneider M., Reissner M., Schmid U., J. Appl. Phys., 121 (2017), 115302. - [25] P
an D., Jian J. K., Sun Y. F., Wu R., J. Alloy. Compd., 519 (2012), 41. - [26] X
iong J., Guo P., Guo F., Sun X., Gu H., Mater. Lett., 117 (2014), 276. - [27] E
ndo Y., Sato T., Kawamura Y., Yamamoto M., Mater. Trans., 48, (2007), 465.10.2320/matertrans.48.465 - [28] F
elmetsger V.V., Mikhov M.K., 2011 IEEE Int. Ultrasonics Sympos. Proc., (2011) 835. - [29] M
olina S.I., Sanchez A.M., Pacheco F.J., Garcia R., Sánchez -Garcia M.A., Sanchez F.J., Calleja E., Appl. Phys. Lett., 74 (1999), 3362.10.1063/1.123345 - [30] O
ng Z.Y., Shanmugan S., Mutharasu D., IJETT, 17 (4), (2014), 192. - [31] P
ierson H.O., Handbook of chemical vapor deposition: principles, technology and applications, William Andrew Publishing, New York, 1999. - [32] S
ong J.H., Huang J.L., Lu H.H., Sung J.C., Thin Solid Films, 516 (2007), 223. - [33] W
itthaut M., Cremer R., Reichert K., Neuschütz D., Thin Solid Films, 377 (2000), 478. - [34] G
ordillo G., Flrez J.M., Hernandez L.C., Sol. Energ. Mat. Sol. C., 37 (1995), 273. - [35] P
erry A.J., J. Vac. Sci. Tech. A, 8 (1990), 1351. - [36] G
erlich D., Dole S.L., Slack G.A., J. Phys. Chem. Solids, 47 (1986), 437.10.1016/0022-3697(86)90039-9 - [37] http://www.ioffe.ru/SVA/NSM/Semicond/BN/mechanic.html, accessed on: 08.13.2014.
- [38] T
hokala R., Chaudhuri J., Thin Solid Films, 266 (1995), 189. - [39] S
tokes A.R., Wilson A.C.J., Proc. Phys. Soc., 56 (1944), 174. - [40] P
al U., Samanta D., Ghoral S., Samantaray B.K., Chaudhuri A.K., J. Phys. D: Appl. Phys., 25 (1992), 1488. - [41] C
ullity B.D., Elements of X-ray Diffraction, 2nd ed., Addition-Wesley, London, 1978.