A Comprehensive Study on the Reliability of GaN Transistors Under High Humidity, High Temperature, and Reverse Bias Conditions
By: D. Stepins, J. Zakis, L. Andze, V. Rustichelli, M. Labalette and L. Ribickis
DOI: https://doi.org/10.2478/lpts-2026-0031 | Journal eISSN: 2255-8896 (formerly 0868-8257) | Journal ISSN: 0868-8257
Language: English
Page range: 102 - 114
Published on: Aug 6, 2026
Published by: Institute of Physical Energetics
In partnership with: Paradigm Publishing Services
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© 2026 D. Stepins, J. Zakis, L. Andze, V. Rustichelli, M. Labalette, L. Ribickis, published by Institute of Physical Energetics
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.