A Comprehensive Study on the Reliability of GaN Transistors Under High Humidity, High Temperature, and Reverse Bias Conditions
By: D. Stepins, J. Zakis, L. Andze, V. Rustichelli, M. Labalette and L. Ribickis
Authors
D. Stepins
Institute of Industrial Electronics, Electrical Engineering and Energy, Riga Technical University, Riga, Latvia
J. Zakis
Institute of Industrial Electronics, Electrical Engineering and Energy, Riga Technical University, Riga, Latvia
L. Andze
Latvian State Institute of Wood Chemistry, Riga, Latvia
V. Rustichelli
IRT Saint Exupéry, Toulouse, France
M. Labalette
IRT Saint Exupéry, Toulouse, France
L. Ribickis
Institute of Industrial Electronics, Electrical Engineering and Energy, Riga Technical University, Riga, Latvia
DOI: https://doi.org/10.2478/lpts-2026-0031 | Journal eISSN: 2255-8896 (formerly 0868-8257) | Journal ISSN: 0868-8257
Language: English
Page range: 102 - 114
Published on: Aug 6, 2026
Published by: Institute of Physical Energetics
In partnership with: Paradigm Publishing Services
Keywords:
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© 2026 D. Stepins, J. Zakis, L. Andze, V. Rustichelli, M. Labalette, L. Ribickis, published by Institute of Physical Energetics
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.