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Performance analysis of low-power multi-threshold CMOS-based 10T SRAM cell Cover

Performance analysis of low-power multi-threshold CMOS-based 10T SRAM cell

Journal of Electrical Engineering
Volume 76 (2025): Issue 3 (June 2025)
By: Premananda B. Siddaiah and  Vallamkonda Ch. Dheeraj  
Open Access
|Jun 2025

Authors

Premananda B. Siddaiah

premanandabs@gmail.com

Department of Electronics and Telecommunication, RV College of Engineering, Bengaluru, India

Vallamkonda Ch. Dheeraj

dheerajvc2001@gmail.com

Department of Electronics and Telecommunication, RV College of Engineering, Bengaluru, India
DOI: https://doi.org/10.2478/jee-2025-0030 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 300 - 306
Submitted on: Apr 2, 2025
|
Published on: Jun 19, 2025
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
CMOS,
leakage power,
low-power,
MTCMOS,
SRAM,
SNM
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2025 Premananda B. Siddaiah, Vallamkonda Ch. Dheeraj, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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