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Black silicon – correlation between microstructure and Raman scattering Cover

Black silicon – correlation between microstructure and Raman scattering

Journal of Electrical Engineering
Volume 70 (2019): Issue 7 (December 2019)
By: Stanislav Jurečka,  Emil Pinčík,  Kentaro Imamura,  Taketoshi Matsumoto and  Hikaru Kobayashi  
Open Access
|Sep 2019

Authors

Stanislav Jurečka

stanislav.jurecka@feit.uniza.sk

Institute of Aurel Stodola, University of Žilina, Liptovský Mikuláš, Slovakia

Emil Pinčík

Institute of Physics SAS, Bratislava, Slovakia

Kentaro Imamura

The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan

Taketoshi Matsumoto

The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan

Hikaru Kobayashi

The Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
DOI: https://doi.org/10.2478/jee-2019-0042 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 58 - 64
Submitted on: Mar 19, 2019
Published on: Sep 28, 2019
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
black silicon,
TEM,
roughness,
fractal properties,
Raman scattering
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2019 Stanislav Jurečka, Emil Pinčík, Kentaro Imamura, Taketoshi Matsumoto, Hikaru Kobayashi, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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