A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics

Jiri Haze; Jiri Hofman

doi:10.2478/jee-2019-0031

Abstract

The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of total ionising dose-induced changes in the impact of temperature on electronic devices for space applications. Various results of pilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.

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A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics

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