A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics
By: Jiri Haze and Jiri Hofman
Abstract
The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of total ionising dose-induced changes in the impact of temperature on electronic devices for space applications. Various results of pilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.
Language: English
Page range: 227 - 235
Submitted on: Mar 2, 2019
Published on: Jul 18, 2019
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
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© 2019 Jiri Haze, Jiri Hofman, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.