A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model
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Language: English
Page range: 145 - 151
Submitted on: Jul 8, 2018
Published on: May 13, 2019
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
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© 2019 Mourad Hebali, Menaouer Bennaoum, Mohammed Berka, Abdelkader Baghdad Bey, Mohammed Benzohra, Djilali Chalabi, Abdelkader Saidane, published by Slovak University of Technology in Bratislava
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