A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model
Authors
Mourad Hebali
Department of Electrotechnical, University Mustapha Stambouli Mascara, Mascara, Algeria
Laboratory: CaSiCCe, Oran, Algeria
Menaouer Bennaoum
Department of Electrotechnical, University Mustapha Stambouli Mascara, Mascara, Algeria
Laboratoire de matriaux appliqus (AML), Universit Djillali Liabs, Sidi Bel-Abbes, Algeria
Mohammed Berka
Department of Electrotechnical, University Mustapha Stambouli Mascara, Mascara, Algeria
Laboratory E.P.O, University of Sidi Bel-Abbes, Sidi Bel-Abbes, Algeria
Abdelkader Baghdad Bey
Department of Electrotechnical, University Mustapha Stambouli Mascara, Mascara, Algeria
Laboratory AMEL, University of Sidi Bel-Abbes, Sidi Bel-Abbes, Algeria
Mohammed Benzohra
Department of Networking and Telecommunications, University of Rouen, Laboratory LECAP, France
Djilali Chalabi
Laboratory: CaSiCCe, Oran, Algeria
Abdelkader Saidane
Laboratory: CaSiCCe, Oran, Algeria
Language: English
Page range: 145 - 151
Submitted on: Jul 8, 2018
Published on: May 13, 2019
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
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© 2019 Mourad Hebali, Menaouer Bennaoum, Mohammed Berka, Abdelkader Baghdad Bey, Mohammed Benzohra, Djilali Chalabi, Abdelkader Saidane, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.