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A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model Cover

A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model

Journal of Electrical Engineering
Volume 70 (2019): Issue 2 (April 2019)
By: Mourad Hebali,  Menaouer Bennaoum,  Mohammed Berka,  Abdelkader Baghdad Bey,  Mohammed Benzohra,  Djilali Chalabi and  Abdelkader Saidane  
Open Access
|May 2019
DOI: https://doi.org/10.2478/jee-2019-0021 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 145 - 151
Submitted on: Jul 8, 2018
|
Published on: May 13, 2019
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
4H-SiC,
6H-SiC,
BSIM3v3,
DG-MOSFET,
nm technology,
4 − characteristics,
subthreshold operation
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2019 Mourad Hebali, Menaouer Bennaoum, Mohammed Berka, Abdelkader Baghdad Bey, Mohammed Benzohra, Djilali Chalabi, Abdelkader Saidane, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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