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Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy Cover

Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

Journal of Electrical Engineering
Volume 66 (2015): Issue 4 (July 2015)
By: Zdeněk Chobola,  Miroslav Luňák,  Jiří Vaněk,  Eduard Hulicius and  Ivo Kusák  
Open Access
|Sep 2015

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DOI: https://doi.org/10.2478/jee-2015-0036 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 226 - 230
Submitted on: Nov 13, 2014
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Published on: Sep 19, 2015
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
molecular beam epitaxy,
excess nois,
lasers diodes,
vertical cavity surface emitting,
gasb substrate
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2015 Zdeněk Chobola, Miroslav Luňák, Jiří Vaněk, Eduard Hulicius, Ivo Kusák, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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