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Far Field Measurements of Phc Led Prepared by E–Beam Lithography Cover

Far Field Measurements of Phc Led Prepared by E–Beam Lithography

Open Access
|Nov 2014

Abstract

The paper deals with optical characterization of the Al0.295Ga0.705As/GaAs multi-quantum well light emitting diode (LED) structure with photonic crystal (2D PhC) patterned on the top of the structure using Electron Beam Direct Write Lithography (EBDWL). Light-current characteristics measured by integrating sphere shows increase of extracted light intensity as 21.1%. Additionally, extracted light intensity was studied by far-field measurements as a complementary method to light-current characteristics. The far-field measurements show increase of extracted light intensity as 31.2%. We suggest this method as more suitable for evaluation of extracted light intensity because it omits emission from edges of the LED and thus light is measured only from the area where PhC is patterned

DOI: https://doi.org/10.2478/jee-2014-0050 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
Language: English
Page range: 309 - 312
Submitted on: Jul 15, 2014
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Published on: Nov 5, 2014
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year

© 2014 Pavol Hronec, Jaroslava Škriniarová, Anna Benčurová, Pavol Nemec, Dušan Pudiš, Jaroslav Kováč, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.