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Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers Cover

Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

Journal of Electrical Engineering
Volume 64 (2013): Issue 6 (November 2013)
By: Jozef Liday,  Peter Vogrinčič,  Viliam Vretenár,  Ivan Hotový,  Mário Kotlár,  Marián Marton and  Vlastimil Řeháček  
Open Access
|Nov 2013
Authors

Authors

Jozef Liday

jozef.liday@stuba.sk

Peter Vogrinčič

Viliam Vretenár

Ivan Hotový

Mário Kotlár

Marián Marton

Vlastimil Řeháček

DOI: https://doi.org/10.2478/jee-2013-0060 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 390 - 392
Published on: Nov 23, 2013
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
p-GaN,
Au/Ni-Mg-O/p-GaN,
Au/Ni-Mg-(O)/SWCNT/p-GaN,
single-walled carbon nanotubes (SWCNT),
ohmic contact,
specific contact resistance,
circular transmission line method (CTLM)
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2013 Jozef Liday, Peter Vogrinčič, Viliam Vretenár, Ivan Hotový, Mário Kotlár, Marián Marton, Vlastimil Řeháček, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

Volume 64 (2013): Issue 6 (November 2013)
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