Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

Liday, Jozef; Vogrinčič, Peter; Vretenár, Viliam; Hotový, Ivan; Kotlár, Mário; Marton, Marián; Řeháček, Vlastimil

doi:10.2478/jee-2013-0060

Abstract

We have examined electrical properties and concentration depth profiles of contact structures Au/Ni-Mg-(O)/SWCNT/p- GaN and Au/Ni-Mg-O/p-GaN, thus with and without an interlaying layer of single-walled carbon nanotubes (SWCNT). The metallization layers were deposited on p-GaN by DC reactive magnetron sputtering in an atmosphere with and without a low concentration of oxygen (cca 0.2 at%). The contacts were annealed in N2 . We have found that the structure containing the SWCNT interlayer exhibits lower values of contact resistivity in comparison with an otherwise identical contact without the SWCNT interlayer

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Improving the Ohmic Properties of Au/Ni–Mg/P–GaN Contacts by Adding Swcnt Metallization Interlayer Between Metal and P–GaN Layers

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