Hydrogen Gas Sensing Performance Of Pt/Sno2 Nanowires/Sic Mos Devices

Shafiei, M.; Kalantar-zadeh, K.; Wlodarski, W.; Comini, E.; Ferroni, M.; Sberveglieri, G.; Kaciulis, S.; Pandolfi, L.

doi:10.21307/ijssis-2017-319

Abstract

This paper presents material and gas sensing properties of Pt/SnO2 nanowires/SiC metal oxide semiconductor devices towards hydrogen. The SnO2 nanowires were deposited onto the SiC substrates by vapor-liquid-solid growth mechanism. The material properties of the sensors were investigated using scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The current-voltage characteristics have been analyzed. The effective change in the barrier height for 1% hydrogen was found to be 142.91 meV. The dynamic response of the sensors towards hydrogen at different temperatures has also been studied. At 530°C, voltage shift of 310 mV for 1% hydrogen was observed

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Hydrogen Gas Sensing Performance Of Pt/Sno2 Nanowires/Sic Mos Devices

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