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Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation Cover

Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation

Transport and Telecommunication Journal
Volume 16 (2015): Issue 3 (September 2015)
By:  and    
Open Access
|Jun 2015
Authors

Authors

Alexander Krainyukov

Krainukovs.A@tsi.lv

Valery Kutev

Kutevs.V@tsi.lv

DOI: https://doi.org/10.1515/ttj-2015-0020 | Journal eISSN: 1407-6179 | Journal ISSN: 1407-6160
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Language: English
Page range: 217 - 223
Published on: Jun 22, 2015
Published by: Transport and Telecommunication Institute
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
micro-arc oxidation,
insulated gate bipolar transistors,
high voltage,
commutation process,
ballast resistance
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2015 Alexander Krainyukov, Valery Kutev, published by Transport and Telecommunication Institute
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 16 (2015): Issue 3 (September 2015)
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