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Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation Cover

Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation

Open Access
|Jun 2015

References

  1. 1. Gordienko, P., Dostovalov, I., Zhevtun I., Shabalin, I. (2013) Micro-arc oxidation for pulse polarization in galvanic-dynamical mode. Electronic Processing of Materials, 49(4), p.35–42 (in Russian).10.3103/S1068375513040066
  2. 2. Martinenko, V., Muskatjev, V., Chibirkin, V. (2004) New constructions of IGBT modules for high-voltage applications. HiT: Design in Electronics, № 4. p.1–4 (in Russian).
  3. 3. Nikitin, A. (2010) Modern high-voltage drivers for IGBT and MOSFET transistors. News of Electronics, № 6. p. 32 – 36 (in Russian).
  4. 4. Suminov, I., Belkin, P., Epelfeild, A., Ljudin, V., Krit, B., Borisov, A. (2011) Plasma Electrolytic modification of the metal and alloys surface. Moscow, Technosphera, 464 pp. (in Russian).
  5. 5. Suminov, I., Epelfeild, A., Ljudin, V., Krit, B., Borisov, A. (2005) Micro-arc oxidation (theory, technology, equipment), Moscow, ECOMET, 368 pp. (in Russian).
DOI: https://doi.org/10.1515/ttj-2015-0020 | Journal eISSN: 1407-6179 | Journal ISSN: 1407-6160
Language: English
Page range: 217 - 223
Published on: Jun 22, 2015
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2015 Alexander Krainyukov, Valery Kutev, published by Transport and Telecommunication Institute
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.