Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation
By: Alexander Krainyukov and Valery Kutev
References
- 1. Gordienko, P., Dostovalov, I., Zhevtun I., Shabalin, I. (2013) Micro-arc oxidation for pulse polarization in galvanic-dynamical mode., 49(4), p.35–42 (in Russian).
- 2. Martinenko, V., Muskatjev, V., Chibirkin, V. (2004) New constructions of IGBT modules for high-voltage applications.№ 4. p.1–4 (in Russian).
- 3. Nikitin, A. (2010) Modern high-voltage drivers for IGBT and MOSFET transistors., № 6. p. 32 – 36 (in Russian).
- 4. Suminov, I., Belkin, P., Epelfeild, A., Ljudin, V., Krit, B., Borisov, A. (2011)Moscow, Technosphera, 464 pp. (in Russian).
- 5. Suminov, I., Epelfeild, A., Ljudin, V., Krit, B., Borisov, A. (2005), Moscow, ECOMET, 368 pp. (in Russian).
Language: English
Page range: 217 - 223
Published on: Jun 22, 2015
Published by: Transport and Telecommunication Institute
In partnership with: Paradigm Publishing Services
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© 2015 Alexander Krainyukov, Valery Kutev, published by Transport and Telecommunication Institute
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.