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High Pressure Raman Study of Layered Semiconductor Tlgase2 Cover

High Pressure Raman Study of Layered Semiconductor Tlgase2

Open Access
|Jun 2018

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DOI: https://doi.org/10.1515/msp-2018-0040 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Language: English
Page range: 203 - 208
Submitted on: Jul 18, 2017
Accepted on: Mar 15, 2018
Published on: Jun 25, 2018
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year

© 2018 S.H. Jabarov, V.B. Aliyeva, T.G. Mammadov, A.I. Mammadov, S.E. Kichanov, L.S. Dubrovinsky, S.S. Babayev, E.G. Pashayeva, N.T. Dang, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.