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High Pressure Raman Study of Layered Semiconductor Tlgase2 Cover

High Pressure Raman Study of Layered Semiconductor Tlgase2

Materials Science-Poland
Volume 36 (2018): Issue 2 (June 2018)
By: S.H. Jabarov,  V.B. Aliyeva,  T.G. Mammadov,  A.I. Mammadov,  S.E. Kichanov,  L.S. Dubrovinsky,  S.S. Babayev,  E.G. Pashayeva and  N.T. Dang  
Open Access
|Jun 2018

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DOI: https://doi.org/10.1515/msp-2018-0040 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 203 - 208
Submitted on: Jul 18, 2017
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Accepted on: Mar 15, 2018
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Published on: Jun 25, 2018
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
layered semiconductor,
high pressure,
Raman study
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2018 S.H. Jabarov, V.B. Aliyeva, T.G. Mammadov, A.I. Mammadov, S.E. Kichanov, L.S. Dubrovinsky, S.S. Babayev, E.G. Pashayeva, N.T. Dang, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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